VS-MURD620CTHM3 Vishay Semiconductors, VS-MURD620CTHM3 Datasheet - Page 4

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VS-MURD620CTHM3

Manufacturer Part Number
VS-MURD620CTHM3
Description
Rectifiers 2x3 Amp 200 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-MURD620CTHM3

Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Reverse Voltage
200 V
Forward Voltage Drop
1 V
Recovery Time
35 ns
Forward Continuous Current
6 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Package / Case
D-PAK
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Tradename
FRED Pt
Note
(1)
Revision: 02-Aug-12
Formula used: T
Pd = Forward power loss = I
Pd
REV
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
180
170
160
150
140
130
120
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Fig. 5 - Maximum Allowable Case Temperature vs.
0
= Inverse power loss = V
0
0
Fig. 6 - Forward Power Loss Characteristics
See note (1)
Square wave (D = 0.50)
Rated V
I
I
F(AV)
F(AV)
www.vishay.com
C
1
1
- Average Forward Current (A)
- Average Forward Current (A)
Average Forward Current
= T
R
DC
applied
J
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
- (Pd + Pd
2
2
F(AV)
R1
REV
x V
3
3
x I
DC
) x R
FM
R
(1 - D); I
at (I
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
thJC
RMS limit
4
4
F(AV)
;
R
/D) (see fig. 6);
at V
5
5
R1
= Rated V
R
4
140
120
100
50
40
30
20
10
80
60
40
20
0
Fig. 7 - Typical Reverse Recovery Time vs. dI
100
100
www.vishay.com/doc?91000
V
T
T
Fig. 8 - Typical Stored Charge vs. dI
I
I
J
J
R
F
F
= 125 °C
= 25 °C
= 30 V
= 6 A
= 3 A
VS-MURD620CTHM3
Vishay Semiconductors
dI
dI
F
F
/dt (A/µs)
/dt (A/µs)
V
T
T
DiodesEurope@vishay.com
J
J
R
= 125 °C
= 25 °C
= 30 V
Document Number: 94742
I
I
F
F
= 3 A
= 6 A
F
/dt
1000
1000
F
/dt

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