FESB8BT-E3/31 Vishay Semiconductors, FESB8BT-E3/31 Datasheet - Page 3

• Manufacturer Part Number: FESB8BT-E3/31
• Description: Rectifiers 100 Volt 8.0A 35ns Single
• Manufacturer: Vishay Semiconductors

Specifications of FESB8BT-E3/31

• Product Category: Rectifiers
• Rohs: yes
• Product: Ultra Fast Recovery Rectifiers
• Configuration: Single Dual Cathode
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 35 ns
• Forward Continuous Current: 8 A
• Max Surge Current: 125 A
• Reverse Current Ir: 10 uA
• Mounting Style: SMD/SMT
• Package / Case: TO-263AB
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Factory Pack Quantity: 800

RATINGS AND CHARACTERISTICS CURVES
(T
Document Number: 88600
Revision: 07-Nov-07
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
A
= 25 °C unless otherwise noted)
Figure 3. Typical Instantaneous Forward Characteristics
150
125
100
100
Figure 1. Maximum Forward Current Derating Curve
10
75
50
25
0.1
10
8
6
4
2
0
0
1
0.2
0
1
Pulse Width = 300 µs
1 % Duty Cycle
Free Air, Ambient Temperature, T
Heatsink, Case Temperature, T
T
J
0.4
= 125 °C
Instantaneous Forward Voltage (V)
0.6
Number of Cycles at 60 Hz
50
0.8
Temperature (°C)
T
8.3 ms Single Half Sine-Wave
1.0
C
[e-mail], [e-mail], [e-mail]
Resistive or Inductive Load
= 100 °C
For technical questions within your region, please contact one of the following:
10
1.2
C
A
100
1.4
T
J
= 25 °C
50 - 200 V
300 - 400 V
500 - 600 V
1.6
1.8
150
100
2.0
FES(F,B)8AT thru FES(F,B)8JT
1000
0.01
100
100
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
0.1
0
T
T
Vishay General Semiconductor
J
J
Percent of Rated Peak Reverse Voltage (%)
= 25 °C
Figure 5. Typical Junction Capacitance
= 125 °C
50 - 200 V
500 - 600 V
20
50 - 200 V
500 - 600 V
Reverse Voltage (V)
1
40
60
10
T
f = 1.0 MHz
V
T
J
sig
J
= 25 °C
= 100 °C
= 50 mVp-p
80
www.vishay.com
100
100
3