IRGP4650DPBF International Rectifier, IRGP4650DPBF Datasheet - Page 3

• Manufacturer Part Number: IRGP4650DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
• Manufacturer: International Rectifier

Specifications of IRGP4650DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 134 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 76 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Fig. 1 - Maximum DC Collector Current vs.
1000
Fig. 5 - Typ. IGBT Output Characteristics
100
140
120
100
0.1
80
70
60
50
40
30
20
10
10
80
60
40
20
0
1
0
T
25
1
C
0
Tc = 25°C
Tj = 175°C
Single Pulse
= 25°C, T
T
Fig. 3 - Forward SOA
50
Case Temperature
J
= -40°C; tp =
2
75
10
J

4
V CE (V)
175°C; V
V CE (V)
T C (°C)
DC
100
100μsec
1msec

60μs
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
6
125
100
GE
10μsec
=15V
8
150
1000
175
10
1000
Fig. 6 - Typ. IGBT Output Characteristics
300
250
200
150
100
100
140
120
100
50
10
80
60
40
20
Fig. 2 - Power Dissipation vs. Case
0
1
0
25
10
0
Fig. 4 - Reverse Bias SOA
T
T
J
50
J
= 175°C; V
2
= 25°C; tp =
Temperature
75
4
V CE (V)
V CE (V)
T C (°C)
100
100
GE

=20V
60μs
6
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
125
8
150
1000
175
10