IRGP4650DPBF International Rectifier, IRGP4650DPBF Datasheet - Page 4

• Manufacturer Part Number: IRGP4650DPBF
• Description: IGBT Transistors 600V UltraFast IGBT 50A 268W 104nC
• Manufacturer: International Rectifier

Specifications of IRGP4650DPBF

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 1.9 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 134 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247
• Continuous Collector Current Ic Max: 76 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

Fig. 7 - Typ. IGBT Output Characteristics
140
120
100
20
18
16
14
12
10
80
60
40
20
20
18
16
14
12
10
8
6
4
2
0
0
8
6
4
2
0
5
0
5
Fig. 11 - Typical V
Fig. 9 - Typical V
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
T
J
= 175°C; tp =
2
T
T
J
J
10
10
= 175°C
= -40°C
4
V GE (V)
V CE (V)
V GE (V)
CE
CE
I CE = 18A
I CE = 35A
I CE = 70A

60μs
vs. V
6
vs. V
I CE = 18A
I CE = 35A
I CE = 70A
15
15
GE
GE
8
20
20
10
Fig. 8 - Typ. Diode Forward Characteristics
140
120
100
140
120
100
Fig. 12 - Typ. Transfer Characteristics
80
60
40
20
20
18
16
14
12
10
80
60
40
20
0
8
6
4
2
0
0
0.0
5
4
Fig. 10 - Typical V
5
V
V GE, Gate-to-Emitter Voltage (V)
175°C
CE
-40°C
25°C
6
1.0
= 50V; tp = 60μs
7
tp = 80μs
10
T
J
8
V GE (V)
= 25°C
V F (V)
2.0
T J = 25°C
9
I CE = 18A
I CE = 35A
I CE = 70A
10 11 12 13 14
CE
15
vs. V
T J = 175°C
3.0
GE
4.0
20