STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet
STGW60H65DF
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STGW60H65DF Summary of contents
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... Table 1. Device summary Order code STGW60H65DF January 2013 This is information on a product in full production. Figure 1. Marking Package GW60H65DF TO-247 Doc ID 023011 Rev 4 STGW60H65DF − Datasheet production data TO-247 Internal schematic diagram Packaging Tube www.st.com 1/13 13 ...
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... Thermal resistance junction-case diode thJC R Thermal resistance junction-ambient thJA 2/13 Parameter = ° 100 ° ° 100 ° ° 400 V, CC Parameter Doc ID 023011 Rev 4 STGW60H65DF Value Unit 650 V 120 240 A ±20 V 120 240 A 360 W 6 µ 150 ° ...
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... STGW60H65DF 2 Electrical characteristics °C unless otherwise specified. J Table 4. Static Symbol Collector-emitter breakdown voltage V (BR)CES ( Collector-emitter saturation V CE(sat) voltage V Gate threshold voltage GE(th) Collector cut-off current I CES ( Gate-emitter leakage I GES current (V Table 5. Dynamic Symbol Input capacitance C ies Output capacitance C oes ...
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... 150 °C J Parameter Test conditions di/dt = 1700 A/µ di/dt = 1630 A/µ 150 °C J Doc ID 023011 Rev 4 STGW60H65DF Min. Typ 1.5 GE 4.2 Figure the IGBT is offered Min. Typ 150 °C 1 ...
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... STGW60H65DF 2.1 Electrical characteristics (curves) Figure 2. Output characteristics ( 15V GE 220 200 V = 20V GE 180 160 140 120 100 Figure 4. Output characteristics ( 220 V = 20V 200 GE 180 160 140 120 100 Figure 6. V vs. junction temperature ...
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... CE Figure 13. Switching losses vs. temperature AM12729v1 E (μJ) 2250 2000 1750 1500 E OFF 1250 1000 750 500 R (Ω Doc ID 023011 Rev 4 STGW60H65DF Gate charge vs. gate-emitter voltage 0 50 100 150 200 current V = 400V 15V Ω °C J --- T = 125 °C ...
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... STGW60H65DF Figure 14. Turn-OFF SOA I (A) C 100 150 ° 0.1 0.01 0 Figure 16. Diode forward current vs. forward voltage V ( 40°C 2 25°C 2 150°C 2.0 1.8 1.6 1.4 1.2 1.0 0 Figure 18. Reverse recovery current as a function of diode current slope I ( 400 V, V ...
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... °C J 1.8 --- T = 125 °C J 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 250 750 1250 Figure 22. Maximum normalized Z to case (Diode) 8/13 Figure 21. Maximum normalized Z AM12735v1 1E-01 1E-02 di/dt (A/μs) 1750 1.E-05 junction th Doc ID 023011 Rev 4 STGW60H65DF junction th to case (IGBT) AM11861v1 Single Pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 1.E-04 1.E-03 1.E-02 1.E-01 t (s) P ...
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... STGW60H65DF 3 Test circuits Figure 23. Test circuit for inductive load switching Figure 25. Switching waveform Td(off) Td(on) Tr(Ion) Ton Figure 24. Gate charge test circuit AM01504v1 Figure 26. Diode recovery time waveform 90% 10 90% 10% Tr(Voff) Tcross 90% 10% Tf Toff AM01506v1 Doc ID 023011 Rev 4 ...
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... ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Table 9. TO-247 mechanical data Dim ∅P ∅R S 10/13 mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.30 5.45 14.20 3.70 18.50 3.55 4.50 5.30 5.50 Doc ID 023011 Rev 4 STGW60H65DF ® Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 5.60 14.80 4.30 3.65 5.50 5.70 ...
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... STGW60H65DF Figure 27. TO-247 drawing Doc ID 023011 Rev 4 Package mechanical data 0075325_G 11/13 ...
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... Date 28-Mar-2012 06-Jun-2012 26-Jul-2012 09-Jan-2013 12/13 Revision 1 Initial release. Document status promoted from preliminary data production data. 2 Section 2.1: Electrical characteristics (curves) on page 5 Added: 3 Updated: Figure 8 on page 6 4 Modified: V typ. and max. values F Doc ID 023011 Rev 4 STGW60H65DF Changes . Table 8 on page ...
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... STGW60H65DF Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...