STGW60H65DF STMicroelectronics, STGW60H65DF Datasheet - Page 7

• Manufacturer Part Number: STGW60H65DF
• Description: IGBT Transistors 60 A 650V Field Stop Trench Gate IGBT
• Manufacturer: STMicroelectronics

Specifications of STGW60H65DF

• Product Category: IGBT Transistors
• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Power Dissipation: 360 W
• Package / Case: TO-247
• Mounting Style: Through Hole

STGW60H65DF
Figure 14. Turn-OFF SOA
Figure 16. Diode forward current vs. forward
Figure 18. Reverse recovery current as a
I
rm
V
I
C
0.01
F
35
30
25
20
15
10
(A)
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
100
(A)
0.1
(V)
10
250
1
0.1
10
V
CC
T
T
15
= 400 V, V
J
J
= 25 °C
= 125 °C
voltage
function of diode current slope
20
750
1
Tj =- 40°C
Tj = 25°C
Tj = 150°C
GE
25
= 15 V, I
---
30
C
35
= 60 A
1250
V
T
10
C
GE
= 150 °C
= 15 V, R
40
45
G
= 10Ω
50
1750
100
55
AM11859v1
AM12731v1
AM12733v1
di/dt (A/μs)
60
Doc ID 023011 Rev 4
V
CE
I
F
(V)
(A)
Figure 15. Short circuit time & current vs. V
Figure 17. Diode forward current vs. junction
Figure 19. Reverse recovery time as a function
t
rr
V
120
110
100
(ns)
t
sc
90
80
70
60
50
40
F
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
17.5
12.5
(μs)
(V)
250
7.5
2.5
20
15
10
-50
5
9
-25
t
SC
10
temperature
of diode current slope
750
0
V
CC
11
V
= 400V, T
CC
25
= 400 V, V
I
SC
12
C
50
1250
= 25°C
Electrical characteristics
T
T
J
J
13
GE
= 25°C
= 125°C
75
= 15 V, I
100
14
---
1750
C
125
= 60 A
IF = 15 A
IF = 30 A
IF = 60 A
15
AM11860v1
150
AM12732v1
AM12734v1
V
di/dt (A/μs)
GE
T
I
(V)
SC
350
250
150
50
J
(ºC)
(A)
7/13
GE