NGTB25N120LWG ON Semiconductor, NGTB25N120LWG Datasheet
NGTB25N120LWG
Specifications of NGTB25N120LWG
Related parts for NGTB25N120LWG
NGTB25N120LWG Summary of contents
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... SLD 1 http://onsemi.com 25 A, 1200 1.85 V CEsat E = 0.8 mJ off TO−247 C CASE 340L E STYLE 4 MARKING DIAGRAM 25N120L AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB25N120LWG TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB25N120L/D ...
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THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−case, for Diode Thermal resistance junction−to−ambient ELECTRICAL CHARACTERISTICS Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate leakage ...
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25°C J 100 COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics 120 100 ...
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V 14 400 100 150 Q , GATE CHARGE (nC) G Figure 7. Typical Gate Charge 1000 t d(off) 100 600 V CE ...
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V = 600 150° Rg, GATE RESISTOR (W) Figure 13. Switching ...
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Duty Cycle 20% 0.1 10 0.01 1% Single Pulse 0.001 0.000001 0.00001 0.0001 Figure 18. IGBT Transient Thermal Impedance 10 50% Duty Cycle 1 20% 10 0.01 Single Pulse 0.001 0.000001 0.00001 ...
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Figure 21. Definition of Turn On Waveform http://onsemi.com 7 ...
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Figure 22. Definition of Turn Off Waveform http://onsemi.com 8 ...