NGTB25N120LWG ON Semiconductor, NGTB25N120LWG Datasheet - Page 8

• Manufacturer Part Number: NGTB25N120LWG
• Description: IGBT Transistors 1200/25A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

Specifications of NGTB25N120LWG

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 1200 V
• Collector-emitter Saturation Voltage: 2.3 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 50 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 77 W
• Package / Case: TO-247
• Mounting Style: Through Hole

NGTB25N120LWG
Figure 22. Definition of Turn Off Waveform
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