STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 3

• Manufacturer Part Number: STD3N40K3
• Description: MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
• Manufacturer: STMicroelectronics

Specifications of STD3N40K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 3.4 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 14 ns
• Gate Charge Qg: 11 nC
• Power Dissipation: 30 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 18 ns

STD3N40K3
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area.
2. I
Table 3.
V
Symbol
Symbol
R
dv/dt
R
ESD(G-S)
I
DM
P
thj-case
V
V
E
T
thj-pcb
I
SD
I
I
TOT
AR
T
GS
DS
AS
stg
D
D
j
(1)
< 2 A, di/dt = 400 A/µs, V
(2)
Drain-source voltage
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
Single pulse avalanche energy
(starting T
Gate source ESD(HBM-C = 100 pF,
R = 1.5 kΩ)
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Absolute maximum ratings
Thermal data
j
= 25°C, I
Parameter
Parameter
DD
D
= 80% V
C
Doc ID 023398 Rev 1
= I
= 25 °C
AR
, V
(BR)DSS
DD
C
C
= 25 °C
= 100 °C
= 50 V)
j
, VDS peak ≤ V
max)
(BR)DSS.
- 55 to 150
Value
Value
2500
± 30
4.17
400
1.2
8.0
30
45
12
50
2
1
Electrical ratings
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
A
V
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