STD3N40K3 STMicroelectronics, STD3N40K3 Datasheet - Page 6

• Manufacturer Part Number: STD3N40K3
• Description: MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3
• Manufacturer: STMicroelectronics

Specifications of STD3N40K3

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 1.8 A
• Resistance Drain-source Rds (on): 3.4 Ohms
• Configuration: Single
• Mounting Style: SMD/SMT
• Package / Case: DPAK
• Fall Time: 14 ns
• Gate Charge Qg: 11 nC
• Power Dissipation: 30 W
• Rise Time: 8 ns
• Typical Turn-off Delay Time: 18 ns

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
0.001
0.01
0.1
(A)
1
I
I
D
D
V
1.5
(V)
3.5
3.0
2.0
1.0
0.5
2.5
0.1
(A)
12
10
GS
0
8
6
4
2
0
0
0
V
Electrical characteristics (curves)
DS
Safe operating area
Output characteristics
Gate charge vs gate-source voltage Figure 7.
5
2
1
V
10
4
GS
V
=10V
DD
I
10
D
=1.8A
=320V
15
6
Tj=150°C
Tc=25°C
Single pulse
20
8
100
10
25
V
V
DS
GS
5V
Q
(V)
7V
6V
Doc ID 023398 Rev 1
V
g
100µs
AM12470v1
10µs
1ms
10ms
DS
(nC)
AM09050v1
AM08996v1
250
150
350
100
50
300
200
0
(V)
Figure 3.
Figure 5.
R
DS(on)
1.5
0.5
2.5
(A)
(Ω)
3.8
2.8
2.6
I
3.6
3.4
3.2
3.0
D
3
0
2
1
0
0.2
Thermal impedance
Transfer characteristics
Static drain-source on-resistance
0.4
2
0.6
V
V
DS
GS
0.8
=15V
4
=10V
1.0 1.2 1.4 1.6 1.8
6
8
STD3N40K3
V
GS
AM12473v1
AM08997v1
I
D
(V)
(A)