AUIRGPS4067D1 International Rectifier, AUIRGPS4067D1 Datasheet

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AUIRGPS4067D1

Manufacturer Part Number
AUIRGPS4067D1
Description
IGBT Transistors Automotive 600V 160A Trench IGBT
Manufacturer
International Rectifier
Datasheet

Specifications of AUIRGPS4067D1

Rohs
yes
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.05 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
240 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
750 W
Package / Case
TO-247
Mounting Style
Through Hole
Factory Pack Quantity
25
Features
INSULATED GATE BIPOLAR TRANSISTOR
WITH ULTRAFAST SOFT RECOVERY DIODE
Benefits
1
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions. Ambient temperature (T
*Qualification standards can be found at http://www.irf.com/
V
I
I
I
I
I
I
I
V
P
P
T
T
Thermal Resistance
R
R
R
R
C
C
NOMINAL
CM
LM
F NOMINAL
FM
D
D
J
ST G
 JC
JC
CS
JA
CES
GE
Low V
Low Switching Losses
6μs SCSOA
Square RBSOA
100% of the parts tested for I
Positive V
Soft Recovery Co-pak Diode
Lead-Free, RoHS Compliant
Automotive Qualified *
@ T
@ T
High Efficiency in a Wide Range of Applications
Suitable for Applications in the Low to Mid-Rrange
Frequencies
Rugged Transient Performance for Increased Reliability
Excellent Current Sharing in Parallel Operation
Low EMI
@ T
@ T
(IGBT)
(Diode)
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
CE (on)
CE (on)
Trench IGBT Technology
Temperature Coefficient
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, V
Clamped Inductive Load Current, V
Diode Nominal Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
LM

d
Parameter
GE
Parameter
= 15V
d
GE
= 20V
c
f
f
G
A
) is 25°C, unless otherwise specified.
n-channel
Gate
G
E
C
300 (0.063 in. (1.6mm) from case)
AUIRGPS4067D1
Min.
–––
–––
–––
–––
AUIRGPS4067D1
C
Collector
Super-247
C
-55 to +175
t
Max.
120
SC
Typ.
0.24
240
600
160
120
360
480
480
±20
±30
750
375
–––
–––
40
G
I
C
V
C
6μs, T
These are stress ratings only;
CE(on)
E
= 160A, T
V
CES
Emitter
Max.
typ. = 1.70V
0.20
0.44
–––
–––
J(max)
E
= 600V
C
www.irf.com
= 100°C
PD - 97726C
= 175°C
09/27/2012
Units
Units
°C/W
°C
W
V
A
V

Related parts for AUIRGPS4067D1

AUIRGPS4067D1 Summary of contents

Page 1

... CES I = 160A 100° 6μ 175°C SC J(max) V typ. = 1.70V E CE(on Super-247 AUIRGPS4067D1 C E Collector Emitter These are stress ratings only; Max. 600 240 160 120 360 480 120 480 ±20 ±30 750 375 -55 to +175 300 (0 ...

Page 2

... AUIRGPS4067D1 Electrical Characteristics @ T = 25°C (unless otherwise specified) J Parameter V Collec tor-to-Emitte r Bre Volta g e (BR)CES   emperature Coeff reakd ow n Voltage (BR) Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th)   Threshold Voltage temp. coefficient ...

Page 3

... AEC-Q101) Comments: This part number(s) passed Automotive qualification. IR’s Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Super-247 N/A Class M4 (+/- 400V) AEC-Q101-002 Class H3B (+/- 8000V) AEC-Q101-001 Class C5 (+/- 1000V) AEC-Q101-005 Yes AUIRGPS4067D1 †† †† †† http://www.irf.com 3 ...

Page 4

... AUIRGPS4067D1 250 200 150 100 100 T C (°C) Fig Maximum DC Collector Current vs. Case Temperature 1000 100 25° 175°C Single Pulse 0 100 V CE (V) Fig Forward SOA  25°C, T 175° 480 420 360 ...

Page 5

... Fig Typ. Diode Forward Characteristics 60A 120A 195A 60A 120A 195A AUIRGPS4067D1 480 420 -40° 25°C 360 T J =175°C 300 240 180 120 60 0 0.0 1.0 2.0 3 30μs ...

Page 6

... AUIRGPS4067D1 35000 30000 25000 20000 15000 10000 5000 100 I C (A) Fig Typ. Energy Loss vs 175° 0.087mH 400V 35000 30000 25000 E ON 20000 15000 10000 5000  ) Fig Typ. Energy Loss vs 175° 0.087mH; V ...

Page 7

... F = 175° 10 4.7  250 300 350 vs 400 500 CE AUIRGPS4067D1 240A 50 2 4.7 10 120A 60A 200 400 600 800 1000 1200 1400 1600 di F /dt (A/μs) Fig Typ. Diode Q vs. di /dt ...

Page 8

... AUIRGPS4067D1 1 0 0.50 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT 0.50 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE  ...

Page 9

... Fig.C.T.1 - Gate Charge Circuit (turn-off DUT R Fig.C.T.3 - S.C. SOA Circuit VCC R = ICM DUT Rg Fig.C.T.5 - Resistive Load Circuit www.irf.com VCC diode clamp / VCC SH VCC G force AUIRGPS4067D1 DUT Rg Fig.C.T.2 - RBSOA Circuit DUT L -5V DUT / DRIVER Rg Fig.C.T.4 - Switching Loss Circuit C force 100K D1 22K C sense DUT 0.0075μF ...

Page 10

... AUIRGPS4067D1 600 500 V 400 300 200 100 -100 -50E-8 00E+0 50E-8 time(µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ T = 175°C using Fig. CT.4 J 160 120 -40 -80 -5.0E-7 0.0E+0 5.0E-7 time (ns) Fig. WF3 - Typ. Diode Recovery Waveform @ T = 175°C using Fig. CT 600 ...

Page 11

... Case Outline and Dimensions — Super-247 Super-247 (TO-274AA) Part Marking Information www.irf.com AUIRGPS4067D1 11 ...

Page 12

... AUIRGPS4067D1 Ordering Information Base part number Package Type AUIRGPS4067D1 Super-247 12 Standard Pack Complete Part Number Form Quantity Tube 25 AUIRGPS4067D1 www.irf.com ...

Page 13

... AUIRGPS4067D1 13 ...

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