AUIRGPS4067D1 International Rectifier, AUIRGPS4067D1 Datasheet - Page 2

• Manufacturer Part Number: AUIRGPS4067D1
• Description: IGBT Transistors Automotive 600V 160A Trench IGBT
• Manufacturer: International Rectifier

Specifications of AUIRGPS4067D1

• Rohs: yes
• Collector- Emitter Voltage Vceo Max: 600 V
• Collector-emitter Saturation Voltage: 2.05 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 240 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 750 W
• Package / Case: TO-247
• Mounting Style: Through Hole
• Factory Pack Quantity: 25

AUIRGPS4067D1
Notes:

‚
ƒ
„
…
Electrical Characteristics @ T
V
 V
V
V
 V
gfe
I
V
I
Switching Characteristics @ T
Q
Q
Q
E
E
E
t
t
t
t
E
E
E
t
t
t
t
C
C
C
RBSOA
SCSOA
Erec
t
I
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
(BR)CES
CE(on)
GE(th)
FM
on
off
total
on
off
total
ies
oes
res
g
ge
gc
V
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V
R
Calculated continuous current based on maximum allowable junction temperature. Package IGBT current limit is 195A. Package diode current
limit is120A. Note that current limitations arising from heating of the device leads may occur.
(BR)CE S
G E (th)
2
CC

is measured at T
/  T J
= 80% (V
/  T
J
Collec tor-to-Emitte r Bre a kd ow n Volta g e
T emperature Coeff. of B reakd ow n Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
Peak Reverse Recovery Current
CES
), V
J
GE
of approximately 90°C.
= 20V, L = 0.87μH, R
Parameter
Parameter
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
G
= 50tested in production I
(BR)CES
safely.
Min.
Min.
600
4.0
—
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—
—
—
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—
—
—
—
—
—
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—
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6
FULL SQUARE
7780
2440
Typ. Max. Units
Typ. Max. Units
0.27
1.70
2.15
2.20
11.1
13.8
240
198
230
505
245
360
-17
2.3
9.4
1.9
2.0
8.2
2.9
3.8
85
69
90
69
65
38
10
63
64
51
53
—
—
—
—
LM
400A.
2.05
±100
13.2
200
360
104
135
230
6.5
2.2
3.2
10
82
82
48
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—
—
mV/°C V
V/°C V
mA
mJ
mJ
μA
nA
nC
pF
ns
ns
μs
μJ
ns
V
V
V
S
V
A
V
I
I
I
V
V
V
V
I
I
V
I
V
V
I
R
E nergy los s es include tail & diode revers e recovery
I
R
I
R
E nergy los s es include tail & diode revers e recovery
I
R
T
V
V
f = 1.0Mhz
T
V
Rg = 4.7, V
V
Rg = 1.0, V
T
V
V
C
C
C
F
F
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
GE
CC
J
GE
CC
J
CC
CC
J
CC
GE
G
G
G
G
= 120A
= 120A, T
= 120A, V
= 120A, V
= 120A, V
= 120A
= 120A, V
= 120A, V
= 120A, V
= 120A, V
= 175°C
= 175°C, I
= 175°C
= 4.7, L = 87μH, T
= 4.7, L = 87μH, T
= 4.7, L = 87μH, T
= 4.7, L = 200μH
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 15V
= 400V
= 0V
= 30V
= 480V, Vp =600V
= 400V, Vp =600V
= 400V, I
= 15V, Rg = 4.7, L =87μH
Conditions
GE
GE
, I
, I
C
C
C
C
CE
CE
C
J
GE
GE
GE
CC
CC
CC
CC
= 500μA
= 15mA (25°C-175°C)
C
GE
GE
= 5.6mA
= 20mA (25°C - 175°C)
F
= 175°C
= 120A
= 600V
= 600V, T
= 480A
= 120A
= 15V, T
= 15V, T
= 15V, T
= 400V, V
= 400V, V
= 400V, V
= 400V, V
= +20V to 0V
= +15V to 0V
Conditions
J
J
J
J
J
J
J
= 175°C
GE
= 25°C
GE
= 25°C
GE
GE
= 25°C
= 150°C
= 175°C
= 175°C
=15V
= 15V
= 15V
= 15V
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