PSMN2R5-60PLQ NXP Semiconductors, PSMN2R5-60PLQ Datasheet - Page 8

• Manufacturer Part Number: PSMN2R5-60PLQ
• Description: MOSFET N-Channel MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN2R5-60PLQ

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 60 V
• Continuous Drain Current: 150 A
• Resistance Drain-source Rds (on): 5.6 mOhms
• Mounting Style: Through Hole
• Package / Case: TO-220AB
• Fall Time: 128 ns
• Gate Charge Qg: 223 nC
• Power Dissipation: 349 W
• Rise Time: 119 ns
• Typical Turn-off Delay Time: 224 ns

NXP Semiconductors
PSMN2R5-60PL
Product data sheet
Fig. 12. Normalized drain-source on-state resistance
Fig. 14. Gate-source voltage as a function of gate
V
(V)
GS
a
2.4
1.8
1.2
0.6
10
0
8
6
4
2
0
factor as a function of junction temperature
T
charge; typical values
-60
0
j
= 25 °C; I
14 V
60
0
D
= 25 A
120
60
V
DS
= 48 V
120
180
All information provided in this document is subject to legal disclaimers.
Q
003aag821
003aag353
T
G
j
( ° C)
(nC)
180
240
27 February 2013
N-channel 60 V, 2.6 mΩ logic level MOSFET in SOT78
Fig. 13. Gate charge waveform definitions
Fig. 15. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
5
4
3
2
10
V
as a function of drain-source voltage; typical
values
V
GS
-1
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V; f = 1 MHz
Q
1
GS1
I
Q
D
GS
Q
GS2
10
Q
G(tot)
PSMN2R5-60PL
Q
GD
C
C
10
C
oss
rss
iss
2
© NXP B.V. 2013. All rights reserved
V
003aag349
003aaa508
DS
(V)
10
3
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