93LC76BT-I/SN Microchip Technology, 93LC76BT-I/SN Datasheet - Page 8
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93LC76BT-I/SN
Manufacturer Part Number
93LC76BT-I/SN
Description
IC EEPROM 8KBIT 2MHZ 8SOIC
Manufacturer
Microchip Technology
Datasheet
1.93C76AT-IOT.pdf
(28 pages)
Specifications of 93LC76BT-I/SN
Format - Memory
EEPROMs - Serial
Memory Type
EEPROM
Memory Size
8K (512 x 16)
Speed
2MHz
Interface
Microwire, 3-Wire Serial
Voltage - Supply
2.5 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
programming cycle is initiated by the rising edge of CLK
93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
2.8
The WRITE instruction is followed by 8 bits (if ORG is
low or A-version devices) or 16 bits (if ORG pin is high
or B-version devices) of data which are written into the
specified address. The self-timed auto-erase and
on the last data bit.
FIGURE 2-6:
DS21796K-page 8
CLK
DO
CS
DI
Write
1
High-Z
WRITE TIMING
0
1
A
N
•••
A0
Dx
•••
The DO pin indicates the Ready/
device, if CS is brought high after a minimum of 250 ns
low (T
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
D0
Note:
Note:
T
CSL
CSL
). DO at logical ‘0’ indicates that programming
T
WC
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/
Busy
T
SV
Busy
© 2008 Microchip Technology Inc.
Ready
status from DO.
Busy
High-Z
status of the
T
CZ