VS-GB200TS60NPBF Vishay, VS-GB200TS60NPBF Datasheet - Page 7

• Manufacturer Part Number: VS-GB200TS60NPBF
• Description: IGBT Modules 209 Amp 600 Volt Half-Bridge
• Manufacturer: Vishay

Specifications of VS-GB200TS60NPBF

• Product Category: IGBT Modules
• Rohs: yes
• Product: IGBT Silicon Modules
• Configuration: Dual
• Collector- Emitter Voltage Vceo Max: 600 V
• Continuous Collector Current At 25 C: 209 A
• Maximum Operating Temperature: + 150 C
• Package / Case: INT-A-PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Minimum Operating Temperature: - 40 C
• Mounting Style: Screw
• Factory Pack Quantity: 15

ORDERING INFORMATION TABLE
CIRCUIT CONFIGURATION
Revision: 27-Mar-13
Dimensions
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
www.vishay.com
Device code
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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G
1
-
-
-
-
-
-
-
-
LINKS TO RELATED DOCUMENTS
B
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Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5 NPT
Current rating (200 = 200 A)
Circuit configuration (T = Half-bridge)
Package indicator (S = INT-A-PAK)
Voltage rating (60 = 600 V)
Speed/type (N = Ultrafast IGBT)
Lead (Pb)-free
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4
5
200
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7
3
2
T
4
1
S
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www.vishay.com/doc?91000
60
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www.vishay.com/doc?95543
N
7
Vishay Semiconductors
PbF
GB200TS60NPbF
[e-mail]
8
Document Number: 94503