VS-GB200TS60NPBF Vishay, VS-GB200TS60NPBF Datasheet - Page 8

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VS-GB200TS60NPBF

Manufacturer Part Number
VS-GB200TS60NPBF
Description
IGBT Modules 209 Amp 600 Volt Half-Bridge
Manufacturer
Vishay
Datasheet

Specifications of VS-GB200TS60NPBF

Product Category
IGBT Modules
Rohs
yes
Product
IGBT Silicon Modules
Configuration
Dual
Collector- Emitter Voltage Vceo Max
600 V
Continuous Collector Current At 25 C
209 A
Maximum Operating Temperature
+ 150 C
Package / Case
INT-A-PAK
Maximum Gate Emitter Voltage
+/- 20 V
Minimum Operating Temperature
- 40 C
Mounting Style
Screw
Factory Pack Quantity
15
DIMENSIONS in millimeters (inches)
Revision: 27-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
3 screws M5 x 10
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
17 (0.67)
(Ø 0.25)
Ø 6.5
1
23 (0.91)
INT-A-PAK IGBT
66 (2.60)
94 (3.70)
2
23 (0.91)
80 (3.15)
3
1
(0.56)
14.3
5 (0.20)
www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
DiodesEurope@vishay.com
37 (1.44)
Document Number: 95543

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