VS-GB75YF120N Vishay Semiconductors, VS-GB75YF120N Datasheet - Page 6

• Manufacturer Part Number: VS-GB75YF120N
• Description: IGBT Modules 1200 Volt 75 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-GB75YF120N

• Product Category: IGBT Modules
• Product: IGBT Silicon Modules
• Configuration: Quad
• Collector- Emitter Voltage Vceo Max: 1200 V
• Continuous Collector Current At 25 C: 100 A
• Maximum Operating Temperature: + 150 C
• Package / Case: ECONO2 4PAK
• Maximum Gate Emitter Voltage: +/- 20 V
• Mounting Style: Screw

Revision: 21-Mar-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
1600
1400
1200
1000
800
600
400
200
0
0
Fig. 17 - Typical Diode Q
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1E-005
0.0001
0.001
0.001
0.01
0.01
20
V
0.1
0.1
10
1
CC
1E-006
1
1E-006
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 600 V; I
D = 0.50
dI
D = 0.50
40
F/
dt (A/µs)
0.02
0.20
0.10
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE)
125°C
Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
0.01
F
0.20
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
60
= 50 A
0.05
25°C
rr
0.10
vs. dI
0.05
0.02
0.01
80
F
/dt
0.0001
100
1E-005
t
1
SINGLE PULSE
( THERMAL RESPONSE )
t
1
, Rectangular Pulse Duration (s)
, Rectangular Pulse Duration (s)
0.001
6
0.01
0.0001
16
14
12
10
8
6
4
2
0
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0.1
0
Fig. 18 - Typical Gate Charge vs. V
100
I
CE
Q
G
200
Vishay Semiconductors
= 5.0 A; L = 600 μH
, Total Gate Charge (nC)
1
300
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400
0.001
10
GB75YF120N
Document Number: 93654
typical value
500
600
GE
700