IHW30N135R3FKSA1 Infineon Technologies, IHW30N135R3FKSA1 Datasheet
IHW30N135R3FKSA1
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IHW30N135R3FKSA1 Summary of contents
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InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW30N135R3 Datasheet IndustrialPowerControl ...
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ReverseconductingIGBTwithmonolithicbodydiode Features: •Offersnewhigherbreakdownvoltageto1350Vforimproved reliability •Powerfulmonolithicbodydiodewithlowforwardvoltage designedforsoftcommutationonly TM •TRENCHSTOP technologyoffering: -verytightparameterdistribution -highruggedness,temperaturestablebehavior -lowV CEsat -easyparallelswitchingcapabilityduetopositive temperaturecoefficientinV CEsat •LowEMI •QualifiedaccordingtoJESD-022fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogenfree(accordingtoIEC61249-2-21) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications: •Inductivecooking Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type V CE IHW30N135R3 1350V 30A InductionHeatingSeries I V ,T ...
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TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
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Maximumratings Parameter Collector-emitter voltage DCcollectorcurrent,limitedbyT T =25° =100°C C Pulsedcollectorcurrent,t limitedbyT p TurnoffsafeoperatingareaV 1350V,T CE Diodeforwardcurrent,limitedbyT T =25° =100°C C Diodepulsedcurrent,t limitedbyT p Gate-emitter voltage TransientGate-emittervoltage(t p PowerdissipationT =25°C C PowerdissipationT =100°C C Operating junction ...
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ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter StaticCharacteristic Collector-emitter breakdown voltage V Collector-emitter saturation voltage V Diode forward voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor ElectricalCharacteristic,atT =25°C,unlessotherwisespecified vj Parameter DynamicCharacteristic Input capacitance Output capacitance ...
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SwitchingCharacteristic,InductiveLoad,atT Parameter IGBTCharacteristic Turn-off delay time Fall time Turn-off energy Turn-off energy, soft switching InductionHeatingSeries =175°C vj Symbol Conditions t T =175°C, d(off =600V,I =30.0A =0.0/15.0V =10.0 ,L =220nH, off ...
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DC 0 100 V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 1. Forwardbiassafeoperatingarea (D=0,T =25°C,T 175°C; 100 125 T ...
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V =20V GE 17V 70 15V 60 13V 11V ,COLLECTOR-EMITTERVOLTAGE[V] CE Figure 5. Typicaloutputcharacteristic (T =175°C) vj 3.0 I =15A C I =30A C I ...
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G Figure 9. Typicalswitchingtimesasafunctionof gateresistor (inductiveload,T =175°C, =15/0V,I =30A,Dynamictestcircuit Figure E) 8 typ. min. max ...
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E off 4.75 4.50 4.25 4.00 3.75 3.50 3.25 3. ,GATERESISTOR Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,T =175°C, =15/0V,I =30A,Dynamictestcircuit Figure off ...
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Q ,GATECHARGE[nC] GE Figure 17. Typicalgatecharge (I =30A 0.1 0. [K/W]: 3.5E-3 0.084474 0.13208 0.20072 i ...
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T =25° =175° 0.0 0.5 1.0 1.5 V ,FORWARDVOLTAGE[V] F Figure 21. Typicaldiodeforwardcurrentasafunction offorwardvoltage InductionHeatingSeries 3 2.5 2.0 1.5 1.0 0.5 2.0 2.5 3.0 ...
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InductionHeatingSeries PG-TO247-3 13 IHW30N135R3 Rev.2.1,2012-10-12 ...
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InductionHeatingSeries 14 IHW30N135R3 t Rev.2.1,2012-10-12 ...
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RevisionHistory IHW30N135R3 Revision:2012-10-12,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2012-10-12 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2012InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems ...