IXXK160N65B4 Ixys, IXXK160N65B4 Datasheet

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IXXK160N65B4

Manufacturer Part Number
IXXK160N65B4
Description
IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXK160N65B4

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.54 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
310 A
Gate-emitter Leakage Current
200 nA
Power Dissipation
940 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-264-3
Continuous Collector Current Ic Max
160 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole
XPT
GenX4
Extreme Light Punch Through
IGBT for 10-30kHz Switching
Symbol
V
V
V
V
I
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
V
© 2012 IXYS CORPORATION, All Rights Reserved
C25
LRMS
C110
CM
CES
GES
sc
J
JM
stg
L
SOLD
C
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V IGBTs
Clamped Inductive Load
T
T
Continuous
Transient
T
Leads Current Limit
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
TM
Test Conditions
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
GE
CE
CE
G
= 25°C (Chip Capability)
= 25°C to 175°C
= 25°C to 175°C, R
= 110°C
= 25°C, 1ms
= 15V, V
= 10Ω, Non Repetitive
= 25°C
= 15V, T
= 250μA, V
= V
= 0V, V
= 160A, V
= 250μA, V
CES
, V
GE
CE
VJ
GE
= ±20V
GE
= 360V, T
= 150°C, R
= 0V
CE
GE
= 15V, Note 1
= 0V
= V
(PLUS247)
GE
GE
J
= 1MΩ
G
= 150°C
Preliminary Technical Information
= 1Ω
T
T
J
J
= 150°C
= 150°C
IXXK160N65B4
IXXX160N65B4
20..120 /4.5..27
Characteristic Values
650
Min.
4.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
CM
1.13/10
1.85
= 320
1.54
Typ.
V
160
±20
±30
160
860
940
175
300
260
650
650
310
CES
10
10
6
Max.
±200
1.80
Nm/lb.in.
6.5
1.5 mA
25
N/lb.
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
A
V
V
V
g
g
V
I
V
t
TO-264 (IXXK)
PLUS247 (IXXX)
G = Gate
C = Collector
Features
Advantages
Applications
C110
fi(typ)
Optimized for 10-30kHz Switching
Square RBSOA
Short Circuit Capability
International Standard Packages
High Current Handling Capability
High Power Density
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
G
C
E
G
= 650V
= 160A
= 90ns
C
≤ ≤ ≤ ≤ ≤ 1.80V
E
E
Tab = Collector
DS100517A(02/13)
Tab
= Emitter
Tab

Related parts for IXXK160N65B4

IXXK160N65B4 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 160A 15V, Note 1 CE(sat © 2012 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXK160N65B4 IXXX160N65B4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 310 160 160 860 = 1Ω 320 G CM ≤ ...

Page 2

... CES 193 52 64 3.30 220 90 1. 4.30 220 160 2.36 0.15 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXK160N65B4 IXXX160N65B4 TO-264 Outline Max Terminals Gate 2,4 = Collector 3 = Emitter ns 3. 0.16 °C/W °C/W ...

Page 3

... T = 25ºC J 160 140 120 I = 320A C 100 160A 80A IXXK160N65B4 IXXX160N65B4 Fig. 2. Extended Output Characteristics @ 15V GE 12V 11V 10V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 320A ...

Page 4

... C oes 100 50 C res Fig. 11. Maximum Transient Thermal Impedance Fig. 11. Maximum Transient Thermal Impedance aaaa 0.001 0.01 Pulse Width - Seconds IXXK160N65B4 IXXX160N65B4 Fig. 8. Gate Charge V = 325V 160A 10mA 100 150 200 250 Q - NanoCoulombs G Fig ...

Page 5

... 15V G GE 200 V = 400V CE 200 180 160 160 140 120 120 100 100 IXXK160N65B4 IXXX160N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º 25º ...

Page 6

... I = 80A 40A 100 125 150 IXXK160N65B4 IXXX160N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 150º ...

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