IXXK160N65B4 Ixys, IXXK160N65B4 Datasheet - Page 6

• Manufacturer Part Number: IXXK160N65B4
• Description: IGBT Transistors 650V/310A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXK160N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.54 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 310 A
• Gate-emitter Leakage Current: 200 nA
• Power Dissipation: 940 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-264-3
• Continuous Collector Current Ic Max: 160 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
90
80
70
60
50
40
30
20
10
140
120
100
0
80
60
40
20
0
25
1
R
V
Fig. 18. Inductive Turn-on Switching Times vs.
T
V
t
t
Fig. 20. Inductive Turn-on Switching Times vs.
r i
r i
J
G
CE
CE
= 150ºC, V
= 1
2
= 400V
= 400V
Ω
50
, V
3
GE
GE
= 15V
t
d(on)
t
= 15V
d(on)
Junction Temperature
T
4
J
- - - -
Gate Resistance
- Degrees Centigrade
- - - -
75
R
5
G
- Ohms
6
100
7
I
C
I
I
C
8
C
= 80A
125
= 40A
= 80A
I
C
9
= 40A
10
150
100
90
80
70
60
50
40
30
57
54
51
48
45
42
39
36
33
30
100
90
80
70
60
50
40
30
20
10
40
R
V
t
Fig. 19. Inductive Turn-on Switching Times vs.
r i
CE
G
= 1
= 400V
Ω
50
, V
GE
= 15V
t
d(on)
60
Collector Current
- - - -
I
C
T
70
- Amperes
J
= 25ºC
T
J
= 150ºC
IXXK160N65B4
IXXX160N65B4
80
IXYS REF: IXX_160N65B4(E9)12-12-12
90
100
70
65
60
55
50
45
40
35
30
25