NGTB20N120IHSWG ON Semiconductor, NGTB20N120IHSWG Datasheet - Page 4

• Manufacturer Part Number: NGTB20N120IHSWG
• Description: IGBT Transistors 1200/20A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

120
100
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
80
60
40
20
0
0
0
0
8
0
V
V
T
Rg = 10 W
Figure 9. Switching Loss vs. Temperature
Figure 7. Diode Forward Characteristics
J
0.5
CE
GE
20
= 150°C
= 600 V
= 15 V
14
Figure 11. Switching Loss vs. I
T
1.0
J
, JUNCTION TEMPERATURE (°C)
I
C
40
V
, COLLECTOR CURRENT (A)
F
, FORWARD VOLTAGE (V)
1.5
20
60
2.0
T
80
26
J
= 25°C
2.5
100
3.0
32
TYPICAL CHARACTERISTICS
V
V
I
Rg = 10 W
120
C
CE
GE
T
3.5
= 20 A
J
= 600 V
= 15 V
= 150°C
C
38
140
4.0
http://onsemi.com
4.5
160
44
4
1000
1000
100
100
16
14
12
10
10
10
8
6
4
2
0
0
1
0
0
8
Figure 10. Switching Time vs. Temperature
V
V
T
Rg = 10 W
V
V
I
Rg = 10 W
J
C
CE
GE
20
CE
GE
20
= 150°C
= 20 A
t
d(off)
= 600 V
= 15 V
14
= 600 V
= 15 V
t
f
Figure 12. Switching Time vs. I
T
Figure 8. Typical Gate Charge
40
J
, JUNCTION TEMPERATURE (°C)
I
40
C
, COLLECTOR CURRENT (A)
Q
G
60
20
, GATE CHARGE (nC)
60
80
80
26
100
100
V
CE
120
32
= 600 V
120
140
t
d(off)
t
C
f
38
140
160
180
160
44