NGTB20N120IHSWG ON Semiconductor, NGTB20N120IHSWG Datasheet - Page 5

• Manufacturer Part Number: NGTB20N120IHSWG
• Description: IGBT Transistors 1200/20A IGBT LPT TO-247
• Manufacturer: ON Semiconductor

1000
0.01
100
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
0.1
10
0
0
1
5
375
0.1
I
I
C(max)
C(max)
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
V
I
T
V
I
Rg = 10 W
T
425
C
C
15
J
CE
GE
J
V
GE
V
= 20 A
= 20 A
= 150°C
CE
= 150°C
CE
Figure 15. Switching Loss vs. V
Pulsed
Continuous
Figure 13. Switching Loss vs. Rg
= 600 V
= 15 V
= 15 V
C
Figure 17. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
1
475
25
Rg, GATE RESISTOR (W)
525
35
dc operation
10
575
45
625
55
1 ms
100
100 ms
TYPICAL CHARACTERISTICS
675
65
CE
50 ms
725
1000
75
http://onsemi.com
775
85
5
1000
100
1000
1000
10
100
100
1
10
10
1
1
1
5
375
Figure 18. Reverse Bias Safe Operating Area
V
V
I
Rg = 10 W
T
C
425
CE
15
GE
J
V
= 20 A
= 150°C
CE
Figure 16. Switching Time vs. V
, COLLECTOR−EMITTER VOLTAGE (V)
Figure 14. Switching Time vs. Rg
= 15 V
, COLLECTOR−EMITTER VOLTAGE (V)
475
10
25
V
Rg, GATE RESISTOR (W)
GE
525
= 15 V, T
35
t
d(off)
t
f
575
45
C
100
= 125°C
625
55
t
V
V
I
T
d(off)
C
675
J
CE
GE
65
t
f
= 20 A
= 150°C
1000
= 600 V
= 15 V
CE
725
75
775
85