FGD3N60UNDF Fairchild Semiconductor, FGD3N60UNDF Datasheet

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FGD3N60UNDF

Manufacturer Part Number
FGD3N60UNDF
Description
IGBT Transistors 600V, 3A Short Circuit Rated IGBT
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FGD3N60UNDF

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
6 A
Gate-emitter Leakage Current
10 uA
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-252-3
Continuous Collector Current Ic Max
3 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT

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FGD3N60UNDF Summary of contents

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µ ...

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Ω Ω Ω Ω µ µ µ µ µ µ µ µ Ω Ω Ω Ω ...

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Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω Ω ...

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CROSSVOLT max µ ...

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