FGD3N60UNDF Fairchild Semiconductor, FGD3N60UNDF Datasheet - Page 3
FGD3N60UNDF
Manufacturer Part Number
FGD3N60UNDF
Description
IGBT Transistors 600V, 3A Short Circuit Rated IGBT
Manufacturer
Fairchild Semiconductor
Datasheet
1.FGD3N60UNDF.pdf
(10 pages)
Specifications of FGD3N60UNDF
Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Collector-emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
6 A
Gate-emitter Leakage Current
10 uA
Power Dissipation
60 W
Maximum Operating Temperature
+ 150 C
Package / Case
TO-252-3
Continuous Collector Current Ic Max
3 A
Minimum Operating Temperature
- 55 C
Mounting Style
SMD/SMT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
µ