NGTB15N120LWG ON Semiconductor, NGTB15N120LWG Datasheet - Page 5
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NGTB15N120LWG
Manufacturer Part Number
NGTB15N120LWG
Description
IGBT Transistors 1200V/15A IGBT LPT TO-247
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N120LWG.pdf
(9 pages)
Specifications of NGTB15N120LWG
Rohs
yes
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
156 W
Package / Case
TO-247
Mounting Style
Through Hole
1000
1000
100
100
10
10
1
1
5
375
V
V
I
T
V
I
Rg = 15 W
T
C
C
CE
GE
J
GE
J
= 15 A
= 15 A
= 150°C
= 150°C
425
15
V
= 600 V
= 15 V
= 15 V
t
CE
Figure 15. Switching Time vs. V
d(on)
Figure 13. Switching Time vs. Rg
t
d(on)
, COLLECTOR−EMITTER VOLTAGE (V)
475
25
Rg, GATE RESISTOR (W)
t
d(off)
t
r
t
525
d(off)
35
1000
0.01
100
575
0.1
45
10
1
1
Figure 17. Reverse Bias Safe Operating Area
625
55
V
CE
TYPICAL CHARACTERISTICS
t
f
675
65
, COLLECTOR−EMITTER VOLTAGE (V)
CE
t
t
10
r
f
725
75
V
http://onsemi.com
GE
= 15 V, T
775
85
5
100
C
1000
0.01
= 125°C
100
4.5
3.5
2.5
1.5
0.5
0.1
10
1
5
4
3
2
1
0
1
375
Single Nonrepetitive
Pulse T
Curves must be derated
linearly with increase
in temperature
V
I
Rg = 15 W
T
C
J
GE
425
= 15 A
= 150°C
V
V
dc operation
CE
CE
= 15 V
1000
C
Figure 14. Energy Loss vs. V
Figure 16. Safe Operating Area
, COLLECTOR−EMITTER VOLTAGE (V)
1 ms
, COLLECTOR−EMITTER VOLTAGE (V)
= 25°C
475
100 ms
10
525
50 ms
575
625
100
675
CE
725
775
100