IXXH40N65B4 Ixys, IXXH40N65B4 Datasheet

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IXXH40N65B4

Manufacturer Part Number
IXXH40N65B4
Description
IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
Manufacturer
Ixys
Datasheet

Specifications of IXXH40N65B4

Rohs
yes
Configuration
Single
Collector- Emitter Voltage Vceo Max
650 V
Collector-emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current At 25 C
120 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
455 W
Maximum Operating Temperature
+ 175 C
Package / Case
TO-247AD-3
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 55 C
Mounting Style
Through Hole

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXXH40N65B4H1
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
XPT
GenX4
Extreme Light Punch Through
IGBT for 5-30 kHz Switching
Symbol
V
V
V
V
I
I
I
SSOA
(RBSOA)
t
(SCSOA)
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
V
© 2013 IXYS CORPORATION, All Rights Reserved
C25
C110
CM
CES
GES
sc
J
JM
stg
L
SOLD
CES
CGR
GES
GEM
C
GE(th)
CE(sat)
d
J
CES
= 25°C, Unless Otherwise Specified)
TM
650V IGBT
TM
Clamped Inductive Load
Test Conditions
T
T
Continuous
Transient
T
T
T
V
V
R
T
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque
Test Conditions
I
V
V
I
I
C
C
C
J
J
C
C
C
C
GE
GE
CE
CE
G
= 25°C to 175°C
= 25°C to 175°C, R
= 25°C (Chip Capability)
= 110°C
= 25°C, 1ms
= 15V, T
= 15V, V
= 25°C
= 82Ω, Non Repetitive
= 250μA, V
= V
= 0V, V
= 40A, V
= 250μA, V
CES
, V
GE
VJ
CE
GE
GE
= ±20V
= 150°C, R
= 360V, T
= 0V
CE
= 15V, Note 1
GE
= V
= 0V
GE
GE
J
= 1MΩ
G
= 150°C
= 5Ω
Advance Technical Information
T
T
J
J
= 150°C
= 150°C
IXXH40N65B4
Min.
650
Characteristic Values
4.0
@V
-55 ... +175
-55 ... +175
Maximum Ratings
CE
I
1.13/10
CM
Typ.
1.50
1.78
= 80
±20
±30
240
V
120
455
175
300
260
650
650
40
10
CES
6
±100
Max.
1.80
500
Nm/lb.in.
6.5
10
μA
μA
nA
°C
°C
°C
°C
°C
μs
W
V
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
t
TO-247 AD
G = Gate
E = Emitter
Features
Advantages
Applications
C110
fi(typ)
Optimized for 5-30kHz Switching
Square RBSOA
Short Circuit Capability
International Standard Package
High Power Density
Extremely Rugged
Low Gate Drive Requirement
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
CES
CE(sat)
G
C
E
= 650V
= 40A
= 54ns
≤ ≤ ≤ ≤ ≤ 1.8V
C
Tab = Collector
Tab
= Collector
DS100526(01/13)

Related parts for IXXH40N65B4

IXXH40N65B4 Summary of contents

Page 1

... CES CE CES GE = ±20V 0V, V GES 40A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Advance Technical Information IXXH40N65B4 Maximum Ratings 650 = 1MΩ 650 GE ±20 ±30 120 40 240 = 5Ω ≤ CES = 150°C ...

Page 2

... CES 1.40 144 54 0. 1.87 126 73 0.78 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH40N65B4 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 0. 2.2 2 ...

Page 3

... J = 15V 14V 13V 12V 11V 10V 2 25º IXXH40N65B4 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature 2 15V GE 1 80A 1.6 C 1.4 1 40A C 1.0 0.8 I ...

Page 4

... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXXH40N65B4 Fig. 8. Gate Charge V = 325V 40A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC ...

Page 5

... Ω 15V G GE 100 V = 400V 25º IXXH40N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 150º 400V Amperes C Fig ...

Page 6

... 15V 400V 100 125 150 IXXH40N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 150º ...

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