IXXH40N65B4 Ixys, IXXH40N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXH40N65B4
• Description: IGBT Transistors 650V/120A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH40N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.5 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 120 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 40 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

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5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
0
7
20A
0.5
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
40A
9
1
Gate-to-Emitter Voltage
1
10
V
1.5
CE
V
V
CE
I
GE
V
- Volts
C
GE
- Volts
1.5
V
11
= 80A
- Volts
GE
= 15V
13V
12V
11V
= 15V
14V
13V
12V
2
12
2
2.5
J
J
13
= 150ºC
= 25ºC
T
2.5
J
= 25ºC
3
14
10V
6V
8V
7V
9V
11V
10V
9V
8V
7V
6V
3.5
15
3
200
180
160
140
120
100
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
70
60
50
40
30
20
10
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
= 15V
5
5
Fig. 4. Dependence of V
0
6
Fig. 6. Input Admittance
Junction Temperature
10
25
T
J
7
- Degrees Centigrade
V
T
J
CE
50
V
= - 40ºC
GE
- Volts
I
I
C
I
C
IXXH40N65B4
25ºC
15
C
8
= 80A
- Volts
= 40A
= 20A
75
V
GE
9
CE(sat)
100
20
= 15V
14V
T
13V
J
on
10
= 150ºC
125
12V
J
25
11V
= 25ºC
11
150
10V
9V
8V
7V
6V
175
12
30