IXXH30N65B4 Ixys, IXXH30N65B4 Datasheet
IXXH30N65B4
Specifications of IXXH30N65B4
Related parts for IXXH30N65B4
IXXH30N65B4 Summary of contents
Page 1
... CES CE CES GE = ±20V 0V, V GES 30A 15V, Note 1 CE(sat © 2013 IXYS CORPORATION, All Rights Reserved Preliminary Technical Information IXXH30N65B4 G Maximum Ratings 650 = 1MΩ 650 GE ±20 ± 146 = 15Ω ≤ CES = 150°C ...
Page 2
... CES 1.55 170 57 0. 2.15 140 100 0.60 0.21 (clamp 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXXH30N65B4 TO-247 (IXXH) Outline Max Terminals Gate 3 - Emitted mJ Dim. Millimeter ns Min. Max 4.7 A 2.2 0. 2.2 ...
Page 3
... T = 25º 60A 30A 10 15A IXXH30N65B4 Fig. 2. Extended Output Characteristics @ Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 60A C I -50 - Degrees Centigrade J Fig. 6. Input Admittance 40º ...
Page 4
... C ies oes res 100 Fig. 11. Maximum Transient Thermal Impedance 0.001 Pulse Width - Second IXXH30N65B4 Fig. 8. Gate Charge V = 325V 30A 10mA NanoCoulombs G Fig. 10. Reverse-Bias Safe Operating Area T = 150ºC ...
Page 5
... 15V 140 400V CE 120 120 100 100 IXXH30N65B4 Fig. 13. Inductive Switching Energy Loss vs. Collector Current off on Ω 15V 400V 150º 25º ...
Page 6
... Ω 15V 400V 60A 100 125 150 IXXH30N65B4 Fig. 19. Inductive Turn-on Switching Times vs. Collector Current d(on) Ω 15V 400V 25º 150º ...