IXXH30N65B4 Ixys, IXXH30N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXH30N65B4
• Description: IGBT Transistors 650V/65A Trench IGBT GenX4 XPT
• Manufacturer: Ixys

Specifications of IXXH30N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.66 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 65 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 230 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 30 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

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5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
7
0.5
8
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
1
9
Gate-to-Emitter Voltage
1
1.5
10
V
CE
V
V
CE
GE
- Volts
V
- Volts
GE
1.5
11
2
- Volts
= 15V
V
14V
13V
GE
= 15V
2.5
12
I
13V
12V
C
2
= 60A
30A
15A
J
J
13
3
= 150ºC
= 25ºC
T
2.5
J
= 25ºC
3.5
14
11V
10V
9V
8V
7V
12V
11V
10V
9V
8V
7V
15
3
4
120
100
60
50
40
30
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
0
0
4
-50
0
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
5
Fig. 4. Dependence of V
0
6
Fig. 6. Input Admittance
Junction Temperature
10
25
T
J
7
- Degrees Centigrade
V
CE
V
50
GE
- Volts
IXXH30N65B4
15
8
- Volts
T
I
75
J
C
= 60A
= - 40ºC
I
C
I
C
= 30A
25ºC
9
= 15A
CE(sat)
100
20
10
on
125
V
GE
J
14V
25
T
= 15V
J
= 25ºC
13V
= 150ºC
11
150
12V
11V
10V
9V
8V
7V
175
30
12