IKA15N65F5XKSA1 Infineon Technologies, IKA15N65F5XKSA1 Datasheet - Page 13

• Manufacturer Part Number: IKA15N65F5XKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IKA15N65F5XKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.6 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 33.3 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-220-3
• Continuous Collector Current Ic Max: 8.5 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65F5 SP000973416

Figure 21. Typicalreverserecoverychargeasa
Figure 23. Typicaldiodepeakrateoffallofreverse
-100
-150
-200
-250
-300
-350
-400
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
-50
0
600
600
di
di
functionofdiodecurrentslope
(V
recoverycurrentasafunctionofdiode
currentslope
(V
800
800
F
F
T
T
T
T
R
R
/dt,DIODECURRENTSLOPE[A/µs]
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
=400V)
j
j
j
j
=25°C, I
=150°C, I
=25°C, I
=150°C, I
1000
1000
F
F
F
F
= 7.5A
= 7.5A
= 7.5A
= 7.5A
1200
1200
1400
1400
1600
1600
Highspeedswitchingseriesfifthgeneration
1800
1800
2000
2000
13
Figure 22. Typicalreverserecoverycurrentasa
Figure 24. Typicaldiodeforwardcurrentasafunction
17.5
15.0
12.5
10.0
7.5
5.0
27
24
21
18
15
12
9
6
3
0
600
0.0
di
functionofdiodecurrentslope
(V
offorwardvoltage
800
F
T
T
T
T
R
/dt,DIODECURRENTSLOPE[A/µs]
=400V)
j
j
j
j
=25°C, I
=150°C, I
=25°C
=150°C
0.5
V
F
,FORWARDVOLTAGE[V]
1000
F
F
= 7.5A
= 7.5A
1.0
1200
1400
1.5
IKA15N65F5
Rev.1.1,2012-11-09
1600
2.0
1800
2000
2.5