US1A-E3/2GT Vishay Semiconductors, US1A-E3/2GT Datasheet
US1A-E3/2GT
Specifications of US1A-E3/2GT
Related parts for US1A-E3/2GT
US1A-E3/2GT Summary of contents
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... US1B 100 RRM RMS V 50 100 DC = 110 ° F(AV) I FSM STG US1A thru US1M Vishay General Semiconductor in high frequency rectification US1D US1G US1J US1K US1M 200 400 600 800 1000 140 280 420 560 700 ...
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... US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A (1) forward voltage Maximum DC reverse current at rated DC blocking voltage Maximum reverse recovery time Typical junction capacitance 4 MHz Note: (1) Pulse test: 300 µs pulse width duty cycle ...
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... J 1 US1J - US1M 0 ° Percent of Rated Peak Reverse Voltage (%) ° 1.0 MHz US1A - US1G mVp-p sig US1J - US1M 1 0 Reverse Voltage (V) Figure 7. Typical Junction Capacitance 0.01 0 Pulse Duration (s) Figure 8. Typical Transient Thermal Impedance 100 100 100 www ...
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... US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.194 (4.93) www.vishay.com For technical questions within your region, please contact one of the following: 4 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Cathode Band 0.066 (1.68) 0.110 (2.79) ...
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ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...