US1A/11T Vishay Semiconductors, US1A/11T Datasheet

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US1A/11T

Manufacturer Part Number
US1A/11T
Description
Rectifiers 1.0 Amp 50 Volt
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of US1A/11T

Product Category
Rectifiers
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
50 V
Forward Voltage Drop
1 V
Recovery Time
50 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
10 uA
Mounting Style
SMD/SMT
Package / Case
SMA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
1800
Document Number: 88768
Revision: 03-Jul-07
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
T
V
I
I
j
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
A
= 25 °C unless otherwise noted)
50 V to 1000 V
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
1.0 A
L
30 A
= 110 °C
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
US1A
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
UA
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
50
35
50
of 260 °C
and WEEE 2002/96/EC
US1B
100
100
UB
70
Vishay General Semiconductor
US1D
200
140
200
UD
- 55 to + 150
US1G
1.0
30
400
280
400
UG
US1A thru US1M
US1J US1K US1M
600
420
600
UJ
800
560
800
UK
www.vishay.com
1000
1000
UM
700
UNIT
°C
V
V
V
A
A
1

Related parts for US1A/11T

US1A/11T Summary of contents

Page 1

Surface Mount Ultrafast Rectifier DO-214AC (SMA) MAJOR RATINGS AND CHARACTERISTICS I F(AV) V RRM I FSM max. j MAXIMUM RATINGS ( °C unless otherwise noted) A PARAMETER Device marking code Maximum repetitive peak ...

Page 2

US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous at 1.0 A (1) forward voltage Maximum DC reverse current °C A rated DC blocking voltage T = 100 ° ...

Page 3

T = 150 ° 125 ° 100 ° °C j 0.01 0.3 0.5 0.7 0.9 1.1 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics ...

Page 4

US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.065 (1.65) 0.049 (1.25) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) www.vishay.com 4 DO-214AC (SMA) Cathode Band 0.066 MIN. (1.68 MIN.) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) ...

Page 5

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...

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