IGW40N65F5FKSA1 Infineon Technologies

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IGW40N65F5FKSA1

Manufacturer Part Number

IGW40N65F5FKSA1

Description

IGBT Transistors IGBT PRODUCTS

Manufacturer

Infineon Technologies

Specifications of IGW40N65F5FKSA1

Rohs

yes

Configuration

Single

Collector- Emitter Voltage Vceo Max

650 V

Collector-emitter Saturation Voltage

1.6 V

Maximum Gate Emitter Voltage

20 V

Continuous Collector Current At 25 C

74 A

Gate-emitter Leakage Current

100 nA

Power Dissipation

255 W

Maximum Operating Temperature

+ 175 C

Package / Case

TO-247-3

Continuous Collector Current Ic Max

46 A

Minimum Operating Temperature

- 40 C

Mounting Style

Through Hole

Part # Aliases

IGW40N65F5 SP000973424

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