IGW50N65H5FKSA1 Infineon Technologies, IGW50N65H5FKSA1 Datasheet - Page 4

• Manufacturer Part Number: IGW50N65H5FKSA1
• Description: IGBT Transistors IGBT PRODUCTS
• Manufacturer: Infineon Technologies

Specifications of IGW50N65H5FKSA1

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 80 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 305 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247-3
• Continuous Collector Current Ic Max: 56 A
• Minimum Operating Temperature: - 40 C
• Mounting Style: Through Hole
• Part # Aliases: IGW50N65H5 SP001001744

Maximumratings
ThermalResistance
Characteristic
ElectricalCharacteristic,atT
StaticCharacteristic
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyT
T
T
Pulsedcollectorcurrent,t
TurnoffsafeoperatingareaV
Gate-emitter voltage
TransientGate-emittervoltage(t
PowerdissipationT
PowerdissipationT
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Parameter
IGBT thermal resistance,
junction - case
Thermal resistance
junction - ambient
Parameter
Collector-emitter breakdown voltage V
Collector-emitter saturation voltage V
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
C
C
=25°Cvaluelimitedbybondwire
=100°C
C
C
=25°C
=100°C
p
limitedbyT
CE
vj
=25°C,unlessotherwisespecified
 650V,T
p
vjmax
=10µs,D<0.010)
Symbol Conditions
R
R
Symbol Conditions
V
I
I
g
CES
GES
fs
vjmax
(BR)CES
CEsat
GE(th)
th(j-c)
th(j-a)
Highspeedswitchingseriesfifthgeneration
vj
 175°C
V
V
T
T
T
I
V
T
T
V
V
C
vj
vj
vj
vj
vj
GE
GE
CE
CE
CE
=0.50mA,V
=25°C
=125°C
=175°C
=25°C
=175°C
=0V,I
=15.0V,I
=650V,V
=0V,V
=20V,I
4
C
GE
=0.20mA
C
=50.0A
Symbol
V
I
I
-
V
P
T
T
M
=20V
C
C
Cpuls
GE
vj
stg
CE
CE
GE
tot
=50.0A
=0V
=V
GE
min.
650
3.2
-40...+175
-55...+150
-
-
-
-
-
-
-
Value
150.0
150.0
305.0
145.0
80.0
56.0
Max.Value
650
±20
±30
260
IGW50N65H5
0.6
Value
0.50
1.65
1.85
1.95
62.0
typ.
Rev.1.1,2012-11-09
4.0
40
-
-
-
-
2000.0
max.
2.10
40.0
100
4.8
-
-
-
-
Unit
Nm
°C
°C
°C
W
V
A
A
A
V
Unit
Unit
K/W
K/W
µA
nA
V
V
V
S