IXXH80N65B4 Ixys, IXXH80N65B4 Datasheet - Page 3

• Manufacturer Part Number: IXXH80N65B4
• Description: IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH80N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

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160
140
120
100
160
140
120
100
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
80
60
40
20
80
60
40
20
0
0
0
0
8
0.5
Fig. 3. Output Characteristics @ T
Fig. 1. Output Characteristics @ T
9
0.5
Fig. 5. Collector-to-Emitter Voltage vs.
1
10
Gate-to-Emitter Voltage
1
1.5
V
CE
V
11
V
CE
GE
- Volts
- Volts
1.5
2
- Volts
V
V
GE
GE
12
= 15V
= 15V
14V
13V
12V
14V
13V
I
40A
2.5
C
80A
= 160A
2
13
J
J
= 150ºC
3
= 25ºC
T
2.5
J
14
= 25ºC
3.5
12V
11V
10V
9V
8V
7V
11V
10V
9V
8V
7V
15
4
3
300
250
200
150
100
200
180
160
140
120
100
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
50
80
60
40
20
0
0
-50
0
4
Fig. 2. Extended Output Characteristics @ T
V
GE
-25
5
= 15V
10
6
0
Fig. 4. Dependence of V
Fig. 6. Input Admittance
7
Junction Temperature
20
25
T
J
- Degrees Centigrade
8
V
CE
50
V
T
GE
- Volts
J
IXXH80N65B4
30
I
= - 40ºC
9
- Volts
C
= 160A
25ºC
I
75
C
I
= 80A
10
C
= 40A
CE(sat)
100
40
11
on
125
T
J
12
= 150ºC
J
50
= 25ºC
V
GE
150
14V
13
13V
= 15V
12V
11V
10V
9V
8V
7V
175
14
60