IXXH80N65B4 Ixys, IXXH80N65B4 Datasheet - Page 4

• Manufacturer Part Number: IXXH80N65B4
• Description: IGBT Transistors 650V/160A TRENCH IGBT GENX4 XPT
• Manufacturer: Ixys

Specifications of IXXH80N65B4

• Rohs: yes
• Configuration: Single
• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 1.65 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 160 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 625 W
• Maximum Operating Temperature: + 175 C
• Package / Case: TO-247AD-3
• Continuous Collector Current Ic Max: 80 A
• Minimum Operating Temperature: - 55 C
• Mounting Style: Through Hole

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
10,000
0.001
1,000
0.01
100
0.1
50
45
40
35
30
25
20
15
10
10
0.00001
5
0
1
0
0
f
V
CE
= 1 MHz
20
= 10V
5
40
10
60
Fig. 7. Transconductance
Fig. 9. Capacitance
80
15
0.0001
I
V
C
100
CE
- Amperes
20
- Volts
120
25
140
T
C ies
C oes
C res
J
= - 40ºC
Fig. 11. Maximum Transient Thermal Impedance
160
30
25ºC
150ºC
180
0.001
35
200
Pulse Width - Second
220
40
180
160
140
120
100
16
14
12
10
80
60
40
20
8
6
4
2
0
0
100
0
T
R
dv / dt < 10V / ns
V
I
I
J
G
C
G
CE
= 150ºC
0.01
= 3
= 80A
= 10mA
= 325V
Ω
20
Fig. 10. Reverse-Bias Safe Operating Area
200
40
300
Fig. 8. Gate Charge
Q
G
- NanoCoulombs
V
60
CE
400
IXXH80N65B4
- Volts
0.1
80
500
100
600
120
700
1