NGTB15N120FLWG ON Semiconductor, NGTB15N120FLWG Datasheet

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NGTB15N120FLWG

Manufacturer Part Number
NGTB15N120FLWG
Description
IGBT Transistors 1200V/15A IGBT SOLAR/UPS
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N120FLWG.pdf (10 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
H&T Electronics H&T Electronics
Part Number:
NGTB15N120FLWG
Quantity:
4 500
NGTB15N120FLWG
IGBT
cost effective Trench construction, and provides superior performance
in demanding switching applications, offering both low on state
voltage and minimal switching loss. The IGBT is well suited for UPS
and solar applications. Incorporated into the device is a soft and fast
co−packaged free wheeling diode with a low forward voltage.
Features
•
•
•
•
•
•
Typical Applications
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 0
ABSOLUTE MAXIMUM RATINGS
Collector−emitter voltage
Collector current
Pulsed collector current, T
limited by T
Diode forward current
Diode pulsed current, T
by T
Gate−emitter voltage
Power Dissipation
Short Circuit Withstand Time
V
Operating junction temperature
range
Storage temperature range
Lead temperature for soldering, 1/8”
from case for 5 seconds
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
Low Saturation Voltage using Trench with Field Stop Technology
Low Switching Loss Reduces System Power Dissipation
10 ms Short Circuit Capability
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices
Solar Inverter
UPS Inverter
GE
Jmax
= 15 V, V
@ T
@ T
@ T
@ T
@ T
@ T
Jmax
CE
C
C
C
C
C
C
Rating
= 25°C
= 100°C
= 100°C
= 25°C
= 100°C
= 25°C
= 500 V, T
pulse
pulse
J
limited
≤ 150°C
Symbol
V
T
V
T
T
I
I
P
CES
CM
T
SLD
I
FM
I
GE
SC
stg
C
F
D
J
−55 to +150
−55 to +150
Value
1200
$20
62.5
120
120
156
260
30
15
30
15
10
1
Unit
ms
°C
°C
°C
W
V
A
A
A
A
V
NGTB15N120FLWG
G
C
Device
E
ORDERING INFORMATION
A
Y
WW
G
MARKING DIAGRAM
G
E
http://onsemi.com
V
15 A, 1200 V
off
CEsat
= Assembly Location
= Year
= Work Week
= Pb−Free Package
15N120FL
AYWWG
= 0.55 mJ
Publication Order Number:
(Pb−Free)
= 2.0 V
Package
TO−247
C
NGTB15N120FLW/D
CASE 340L
E
STYLE 4
TO−247
30 Units / Rail
Shipping

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NGTB15N120FLWG Summary of contents

Page 1

... SLD 1 http://onsemi.com 15 A, 1200 2.0 V CEsat E = 0.55 mJ off TO−247 C CASE 340L E STYLE 4 MARKING DIAGRAM 15N120FL AYWWG A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping NGTB15N120FLWG TO−247 30 Units / Rail (Pb−Free) Publication Order Number: NGTB15N120FLW/D ...

Page 2

THERMAL CHARACTERISTICS Rating Thermal resistance junction−to−case, for IGBT Thermal resistance junction−to−case, for Diode Thermal resistance junction−to−ambient ELECTRICAL CHARACTERISTICS (T Parameter STATIC CHARACTERISTIC Collector−emitter breakdown voltage, gate−emitter short−circuited Collector−emitter saturation voltage Gate−emitter threshold voltage Collector−emitter cut−off current, gate− emitter short−circuited Gate ...

Page 3

ELECTRICAL CHARACTERISTICS (T Parameter DIODE CHARACTERISTIC Forward voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current = 25°C unless otherwise specified) J Test Conditions ...

Page 4

T = 25° 150 100 COLLECTOR−EMITTER VOLTAGE (V) CE Figure 1. Output Characteristics 150 ...

Page 5

T = 25° FORWARD VOLTAGE (V) F Figure 7. Diode Forward Characteristics 2 600 ...

Page 6

V = 600 150°C 2.5 J 2.0 1.5 1.0 0 Rg, GATE RESISTOR (W) Figure 13. Switching ...

Page 7

Duty Cycle 20% 10% 0 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 Figure 19. IGBT Transient Thermal Impedance 10 50% Duty Cycle 1 20% 10 0.01 Single Pulse 0.001 0.000001 0.00001 ...

Page 8

Figure 22. Definition of Turn On Waveform http://onsemi.com 8 ...

Page 9

Figure 23. Definition of Turn Off Waveform http://onsemi.com 9 ...

Page 10

... SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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