NGTB15N120FLWG ON Semiconductor, NGTB15N120FLWG Datasheet - Page 3
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NGTB15N120FLWG
Manufacturer Part Number
NGTB15N120FLWG
Description
IGBT Transistors 1200V/15A IGBT SOLAR/UPS
Manufacturer
ON Semiconductor
Datasheet
1.NGTB15N120FLWG.pdf
(10 pages)
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ELECTRICAL CHARACTERISTICS
DIODE CHARACTERISTIC
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Parameter
(T
J
= 25°C unless otherwise specified)
V
GE
= 0 V, I
I
I
F
F
V
Test Conditions
GE
di
di
= 15 A, V
= 15 A, V
F
F
http://onsemi.com
/dt = 200 A/ms
T
/dt = 200 A/ms
= 0 V, I
T
F
J
J
= 15 A, T
= 125°C
= 25°C
R
R
F
= 400 V
= 400 V
= 15 A
3
J
= 150°C
Symbol
I
I
Q
Q
V
rrm
rrm
t
t
rr
rr
F
rr
rr
Min
1.5
−
−
−
−
−
−
Typ
166
200
1.8
2.5
1.1
1.5
12
15
Max
2.2
−
−
−
−
−
−
Unit
ns
mc
ns
mc
V
A
A