IKA15N65F5 Infineon Technologies, IKA15N65F5 Datasheet - Page 8

• Manufacturer Part Number: IKA15N65F5
• Description: IGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
• Manufacturer: Infineon Technologies

Specifications of IKA15N65F5

• Collector- Emitter Voltage Vceo Max: 650 V
• Collector-emitter Saturation Voltage: 2.1 V
• Maximum Gate Emitter Voltage: 20 V
• Continuous Collector Current At 25 C: 14 A
• Gate-emitter Leakage Current: 100 nA
• Power Dissipation: 16.7 W
• Package / Case: PG-TO-220-3
• Mounting Style: Through Hole
• Part # Aliases: IKA15N65F5XKSA1

Figure 1. Forwardbiassafeoperatingarea
Figure 3. Collectorcurrentasafunctionofcase
14.0
12.0
10.0
0.1
8.0
6.0
4.0
2.0
0.0
10
1
25
1
V
(D=0,T
RecommendeduseatV
temperature
(V
CE
t
100µs
200µs
500µs
p
,COLLECTOR-EMITTERVOLTAGE[V]
GE
=1µs
10µs
50µs
50
DC
T
15V,T
C
,CASETEMPERATURE[°C]
C
=25°C,T
10
75
vj
175°C)
vj
100
175°C;V
GE
100
125
7.5V)
GE
=15V.
Highspeedswitchingseriesfifthgeneration
150
1000
175
8
Figure 2. Powerdissipationasafunctionofcase
Figure 4. Typicaloutputcharacteristic
35
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
0.0
25
V
V
GE
temperature
(T
(T
CE
=20V
0.5
vj
vj
18V
12V
10V
,COLLECTOR-EMITTERVOLTAGE[V]
=25°C)
8V
7V
6V
5V
4V
50
175°C)
T
C
,CASETEMPERATURE[°C]
1.0
75
1.5
100
2.0
2.5
IKA15N65F5
125
Rev.1.1,2012-11-09
3.0
150
3.5
175
4.0