BSS131H6327XT Infineon Technologies, BSS131H6327XT Datasheet
BSS131H6327XT
Specifications of BSS131H6327XT
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BSS131H6327XT Summary of contents
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Type ® SIPMOS Small-Signal-Transistor Feature • N-Channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 Type Package Pb-free BSS131 PG-SOT23 Yes Parameter ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.6 Rev. 2.6 Symbol Conditions R thJA =25 ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation =f tot A 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0 [°C] [° Safe operating area =f =25 °C; D ...
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Typ. output characteristics =f =25 ° parameter 0.4 0 0.3 0.3 0.2 0.2 0.1 0 ...
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Drain-source on-state resistance = DS(on -60 -60 -20 - ...
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Typ. gate charge =f =0.1 A pulsed V GS gate D parameter 0.5 0.5 1 ...
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Package Outline: Footprint: Rev. 2.6 Rev. 2.6 Packaging: page 8 page 8 BSS131 2012-03-29 2012-03-29 ...
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... Infineon Technologies components may be used in life-support devices or systems only with Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can the express written approval of Infineon Technologies failure of such components can ...