PSMN016-100BS,118 NXP Semiconductors, PSMN016-100BS,118 Datasheet - Page 8

• Manufacturer Part Number: PSMN016-100BS,118
• Description: MOSFET N-CH 100V 16 MOHM MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN016-100BS,118

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 4.5 V
• Continuous Drain Current: 57 A
• Resistance Drain-source Rds (on): 28.8 mOhms
• Mounting Style: Through Hole
• Package / Case: D2PAK
• Power Dissipation: 148 W
• Factory Pack Quantity: 800

NXP Semiconductors
PSMN016-100BS
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
R
(mΩ)
V
DSon
(V)
GS
80
60
40
20
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
(V) = 5.0
15
20 V
20
V
DS
= 50 V
5.2
30
40
45
80 V
Q
All information provided in this document is subject to legal disclaimers.
G
I
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(nC)
D
5.5
(A)
10.0
6.0
8.0
60
60
Rev. 2 — 1 March 2012
N-channel 100V 16 mΩ standard level MOSFET in D2PAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
−1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN016-100BS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2012. All rights reserved.
DS
003aaa508
001aal321
(V)
C
C
C
iss
oss
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10
2
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