PSMN2R8-40BS,118 NXP Semiconductors, PSMN2R8-40BS,118 Datasheet
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PSMN2R8-40BS,118
Specifications of PSMN2R8-40BS,118
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PSMN2R8-40BS,118 Summary of contents
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... PSMN2R8-40BS N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits ...
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... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2012. All rights reserved. ...
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... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R8-40BS Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK = DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS = 10 μ 100 μ 100 (V) DS ...
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... Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max - 0.4 0 003aad247 δ = ...
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... DS see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max 150 ...
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... C rss (V) GS Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max - 0.85 1 003aag678 (V) GS © NXP B.V. 2012. All rights reserved. ...
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... V ( 0.9 1.2 V (V) DS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Forward transconductance as a function of drain current; typical values −1 min typ max −2 −3 −4 − ...
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... DSon (mΩ 120 180 ( ° Fig 14. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS 003aad280 max typ min 0 60 120 T 003aad432 ...
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... Fig 16. Gate-source voltage as a function of gate 003aad436 (A) C iss C oss C rss (V) DS Fig 18. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS ( charge; typical values 100 I ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...
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... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN2R8-40BS v.1 20120320 PSMN2R8-40BS Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 March 2012 Document identifier: PSMN2R8-40BS ...