PSMN2R8-40BS,118 NXP Semiconductors, PSMN2R8-40BS,118 Datasheet

PSMN2R8-40BS,118

Manufacturer Part Number

PSMN2R8-40BS,118

Description

MOSFET Std N-chanMOSFET

Manufacturer

NXP Semiconductors

Datasheet

1.PSMN2R8-40BS118.pdf (15 pages)

Specifications of PSMN2R8-40BS,118

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

2.9 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

D2PAK

Minimum Operating Temperature

- 55 C

Power Dissipation

211 W

Factory Pack Quantity

800

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1. Product profile

Table 1.

[1]

Symbol

Static characteristics

Dynamic characteristics

Avalanche ruggedness

tot

DS(AL)S

DSon

G(tot)

Continuous current rating is limited by package.

Quick reference data

Parameter

drain-source voltage

drain current

total power dissipation

junction temperature

drain-source on-state resistance

gate-drain charge

total gate charge

non-repetitive drain-source

avalanche energy

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.



PSMN2R8-40BS

N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK

Rev. 1 — 20 March 2012

High efficiency due to low switching

and conduction losses

DC-to-DC converters

Load switching

Conditions

see

≥ 25 °C; T

= 100 A; V

Figure 1

Figure

Figure 14

Figure

= 25 °C; V

= 25 °C; see

= 10 V; I

= 10 V; T

= 50 Ω

13; see

15; see

sup

≤ 175 °C

j(init)

= 10 A; T

= 10 A; V

≤ 40 V; unclamped;

Figure 2

= 10 V;

= 25 °C;

Figure 14

Figure 16

= 100 °C;

= 25 °C;

= 20 V;



Suitable for standard level gate drive

sources

Motor control

Server power supplies

[1]

Min

-55

Product data sheet

Typ

3.58

2.47

175

Max

100

211

4.2

2.9

407

Unit

°C

mΩ

Related parts for PSMN2R8-40BS,118

PSMN2R8-40BS,118 Summary of contents

Page 1

... PSMN2R8-40BS N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Rev. 1 — 20 March 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in SOT404 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  ...

Page 2

... SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) Marking code PSMN2R8-40BS All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Graphic symbol mbb076 3 Version SOT404 © NXP B.V. 2012. All rights reserved. ...

Page 3

... P der (%) 150 200 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min - = 20 kΩ - -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...

Page 4

... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R8-40BS Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK = DSon DS D (1) 1 All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS = 10 μ 100 μ 100 (V) DS ...

Page 5

... Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed circuit board - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max - 0.4 0 003aad247 δ = ...

Page 6

... DS see Figure MHz °C; see Figure 0.8 Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max 150 ...

Page 7

... C rss (V) GS Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Min Typ Max - 0.85 1 003aag678 (V) GS © NXP B.V. 2012. All rights reserved. ...

Page 8

... V ( 0.9 1.2 V (V) DS Fig 10. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS Forward transconductance as a function of drain current; typical values −1 min typ max −2 −3 −4 − ...

Page 9

... DSon (mΩ 120 180 ( ° Fig 14. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS 003aad280 max typ min 0 60 120 T 003aad432 ...

Page 10

... Fig 16. Gate-source voltage as a function of gate 003aad436 (A) C iss C oss C rss (V) DS Fig 18. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS ( charge; typical values 100 I ...

Page 11

... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved. SOT404 ...

Page 12

... NXP Semiconductors 9. Revision history Table 8. Revision history Document ID Release date PSMN2R8-40BS v.1 20120320 PSMN2R8-40BS Product data sheet N-channel 40 V 2.9 mΩ standard level MOSFET in D2PAK Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 ...

Page 13

... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS © NXP B.V. 2012. All rights reserved ...

Page 14

... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMedia andUCODE — are trademarks of NXP B.V. HD Radio andHD Radio logo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 20 March 2012 PSMN2R8-40BS © NXP B.V. 2012. All rights reserved ...

Page 15

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 20 March 2012 Document identifier: PSMN2R8-40BS ...

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