SBYV26C-E3/51 Vishay Semiconductors, SBYV26C-E3/51 Datasheet - Page 3
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SBYV26C-E3/51
Manufacturer Part Number
SBYV26C-E3/51
Description
Rectifiers 600 Volt 1.0A 30ns 30 Amp IFSM
Manufacturer
Vishay Semiconductors
Datasheet
1.SBYV26C-E31.pdf
(5 pages)
Specifications of SBYV26C-E3/51
Product Category
Rectifiers
Rohs
yes
Product
Ultra Fast Recovery Rectifiers
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.5 V
Recovery Time
30 ns
Forward Continuous Current
1 A
Max Surge Current
30 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Package / Case
DO-204AL
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
5000
Document Number: 88735
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current
0.001
0.01
0.01
100
100
100
Fig. 4 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
10
1
1
1
Fig. 5 - Typical Reverse Leakage Characteristics
1
0
0
Percent of Rated Peak Reverse Voltage (%)
0.5
Instantaneous Forward Voltage (V)
20
1.0
Number of Cycles at 50 Hz
T
J
= 165 °C
1.5
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
10 ms Single Half Sine-Wave
For technical questions within your region, please contact one of the following:
2.0
10
T
T
T
T
J
Pulse Width = 300 μs
J
J
J
= 25 °C
60
T
= 165 °C
= 125 °C
= 25 °C
2.5
J
1 % Duty Cycle
= T
T
J
J
Max.
= 125 °C
3.0
80
This datasheet is subject to change without notice.
3.5
100
100
4.0
100
100
10
10
1
1
0.01
0.1
DiodesEurope@vishay.com
Fig. 7 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 6 - Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
www.vishay.com/doc?91000
10
T
f = 1.0 MHz
V
J
sig
10
= 25 °C
= 50 mV
SBYV26C
www.vishay.com
p-p
100
100
3