IPI200N25N3 G Infineon Technologies, IPI200N25N3 G Datasheet - Page 7
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IPI200N25N3 G
Manufacturer Part Number
IPI200N25N3 G
Description
MOSFET N-Channel 250V MOSFET
Manufacturer
Infineon Technologies
Datasheet
1.IPI200N25N3_G.pdf
(11 pages)
Specifications of IPI200N25N3 G
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
64 A
Resistance Drain-source Rds (on)
20 mOhms at 10 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-262-3
Fall Time
12 nS
Gate Charge Qg
64 nC
Minimum Operating Temperature
- 55 C
Power Dissipation
300 W
Rise Time
20 nS
Typical Turn-off Delay Time
45 nS
Part # Aliases
IPI200N25N3GAKSA1 IPI200N25N3GXK SP000714308
Rev. 2.4
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
290
280
270
260
250
240
230
220
10
1
AV
=f(T
-60
); R
1
j
GS
); I
j(start)
=25 W
-20
D
=1 mA
10
20
t
T
AV
j
60
[°C]
[µs]
125 °C
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
10
V
8
6
4
2
0
g(th)
gs(th)
GS
gate
0
); I
IPB200N25N3 G
DD
Q
D
=25 A pulsed
gs
20
50 V
Q
Q
gate
g
Q
40
125 V
sw
[nC]
Q
gd
IPP200N25N3 G
200 V
IPI200N25N3 G
60
2011-07-14
Q
gate
80