IPP110N20NAXK Infineon Technologies, IPP110N20NAXK Datasheet - Page 4

• Manufacturer Part Number: IPP110N20NAXK
• Description: MOSFET OptiMOS 3 Power Transistor
• Manufacturer: Infineon Technologies

Specifications of IPP110N20NAXK

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Resistance Drain-source Rds (on): 10.7 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Package / Case: PG-TO220-3
• Fall Time: 11 ns
• Gate Charge Qg: 65 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 300 W
• Rise Time: 26 ns
• Typical Turn-off Delay Time: 41 ns
• Part # Aliases: IPP110N20NA IPP110N20NAAKSA1

Rev. 2.1
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
10
10
10
10
10
320
280
240
200
160
120
-1
DS
3
2
1
0
80
40
C
10
0
); T
)
-1
0
C
p
=25 °C; D =0
10
50
0
V
T
DS
10
C
100
[°C]
[V]
1
10 ms
DC
100 µs
1 ms
10 µs
150
10
2
1 µs
200
10
page 4
3
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
=f(t
10
10
10
C
-1
-2
0
); V
10
p
100
)
80
60
40
20
-5
0.02
0
0.01
0.05
GS
0.2
0.5
0.1
0
single pulse
≥10 V
p
10
/T
IPB107N20NA
-4
50
10
-3
t
T
p
C
[s]
100
[°C]
10
-2
IPP110N20NA
150
10
-1
2011-05-11
200
10
0