BSS316NH6327XT Infineon Technologies, BSS316NH6327XT Datasheet - Page 4

• Manufacturer Part Number: BSS316NH6327XT
• Description: MOSFET OptiMOS 2 Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS316NH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.4 A
• Resistance Drain-source Rds (on): 160 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 1 ns
• Gate Charge Qg: 0.6 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 500 mW
• Rise Time: 2.3 ns
• Typical Turn-off Delay Time: 5.8 ns
• Part # Aliases: BSS316N BSS316NH6327XTSA1 H6327

Rev 2.3
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
0.375
0.125
=f(T
0.25
10
10
10
0.5
10
10
0
DS
-1
-2
-3
1
0
A
10
0
); T
)
-1
A
p
=25 °C; D =0
40
10
0
10 ms
T
V
A
DS
[°C]
80
[V]
1 ms
DC
100 µs
10
1
10 µs
120
1 µs
10
page 4
2
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJA
=f(T
=f(t
1.6
1.2
0.8
0.4
10
10
10
10
A
0
3
2
1
0
); V
10
p
0
)
-5
0.02
0.01
0.1
0.05
0.5
0.2
GS
20
≥10 V
10
single pulse
p
-4
/T
40
10
-3
60
10
T
-2
t
A
p
80
[°C]
[s]
10
-1
100
10
120
0
BSS316N
10
140
1
2011-07-06
160
10
2