PSMN012-25YLC,115 NXP Semiconductors, PSMN012-25YLC,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN012-25YLC,115
• Description: MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-25YLC,115

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 25 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 33 A
• Resistance Drain-source Rds (on): 12.6 mOhms
• Configuration: Single
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Package / Case: SO-8
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 26 W
• Factory Pack Quantity: 1500

NXP Semiconductors
Table 6.
PSMN012-25YLC
Product data sheet
Symbol
t
t
t
t
Q
Source-drain diode
V
t
Q
t
t
d(on)
r
d(off)
f
rr
a
b
Fig 6.
SD
oss
r
(A)
I
D
40
30
20
10
0
function of drain-source voltage; typical values
Output characteristics; drain current as a
0
Characteristics
10
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
source-drain voltage
reverse recovery time
recovered charge
reverse recovery rise
time
reverse recovery fall
time
4.5
1
N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
2
…continued
3
V
GS
Conditions
V
R
V
T
I
see
I
V
V
V
All information provided in this document is subject to legal disclaimers.
S
S
4
003aag264
j
(V) = 3.5
DS
GS
DS
GS
DS
G(ext)
= 25 °C
= 10 A; V
= 10 A; dI
V
DS
Figure 17
= 12 V; R
= 12 V
= 12 V; see
= 0 V; V
= 0 V; I
2.4
2.2
(V)
2.6
3.0
2.8
= 4.7 Ω
Rev. 1 — 25 October 2011
5
S
GS
S
DS
/dt = -100 A/µs; V
= 10 A; dI
L
= 0 V; T
= 0.6 Ω; V
= 12 V; f = 1 MHz;
Figure 18
Fig 7.
j
S
= 25 °C;
/dt = -100 A/µs;
R
(m Ω )
GS
DSon
40
30
20
10
= 4.5 V;
0
of gate-source voltage; typical values
Drain-source on-state resistance as a function
GS
0
= 0 V;
4
PSMN012-25YLC
8
Min
-
-
-
-
-
-
-
-
-
-
12
Typ
11.7
9.4
14.4
5.6
3.3
0.85
14.7
4.6
8.2
6.5
© NXP B.V. 2011. All rights reserved.
16
003aag265
V
GS
Max
-
-
-
-
-
1.1
-
-
-
-
(V)
20
Unit
ns
ns
ns
ns
nC
V
ns
nC
ns
ns
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