BSS126 H6906 Infineon Technologies, BSS126 H6906 Datasheet - Page 7

• Manufacturer Part Number: BSS126 H6906
• Description: MOSFET N-KANAL SMALL SIGNAL MOS
• Manufacturer: Infineon Technologies

Specifications of BSS126 H6906

• Product Category: MOSFET
• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.021 A
• Resistance Drain-source Rds (on): 700 Ohms
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT23-3
• Fall Time: 115 ns
• Forward Transconductance Gfs (max / Min): 0.017 S
• Gate Charge Qg: 1.4 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 0.5 W
• Rise Time: 9.7 ns
• Typical Turn-off Delay Time: 14 ns
• Part # Aliases: BSS126H6906XT BSS126H6906XTSA1 SP000705716

Rev. 2.1
Rev. 2.1
13 Forward characteristics of reverse diode
I
parameter: T
16 Drain-source breakdown voltage
I
F
D
=f(V
=f(V
0.001
0.001
0.01
0.01
700
660
620
580
540
500
0.1
0.1
SD
GS
-60
)
); V
0
0
DS
j
=3 V; T
-20
0.5
0.5
150 °C
150 °C
20
j
=25 °C
1
1
V
V
T
150 °C, 98%
150 °C, 98%
SD
SD
j
60
25 °C
25 °C
[°C]
[V]
[V]
25 °C, 98%
25 °C, 98%
1.5
1.5
100
2
2
140
180
2.5
2.5
page 7
page 7
15 Typ. gate charge
V
parameter: V
GS
=f(Q
-1
-1
-2
-2
-3
-3
-4
-4
6
6
5
5
4
4
3
3
2
2
1
1
0
0
gate
0
0
); I
DD
D
=0.1 A pulsed
0.4
0.4
Q
Q
0.2 VDS(max)
0.2 VDS(max)
gate
gate
0.8
0.8
[nC]
[nC]
0.5 VDS(max)
0.5 VDS(max)
1.2
1.2
0.8 VDS(max)
0.8 VDS(max)
2012-03-14
2012-03-14
BSS126
1.6
1.6