BSS670S2LH6327XT Infineon Technologies, BSS670S2LH6327XT Datasheet - Page 5

• Manufacturer Part Number: BSS670S2LH6327XT
• Description: MOSFET OptiMOS Buck Converter Series
• Manufacturer: Infineon Technologies

Specifications of BSS670S2LH6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 540 mA
• Resistance Drain-source Rds (on): 650 mOhms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 32 nS
• Gate Charge Qg: 2.26 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 37 ns
• Typical Turn-off Delay Time: 21 ns
• Part # Aliases: BSS670S2L BSS670S2LH6327XTSA1 H6327

5 Typ. output characteristic
I
parameter: t
7 Typ. transfer characteristics
I
parameter: t
D
D
= f ( V
= f (V
Rev. 2.6
A
1.5
0.5
2.2
A
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
3
2
1
0
1
0
DS
GS
0
0
); T
10V
6V
5V
); V
p
p
0.5
0.5
= 80 µs
= 80 µs
j
DS
=25°C
1
1
2 x I
1.5
1.5
D
x R
2
2
DS(on)max
2.5
2.5
3
3
3.5V
4.5V
4V
3V
3.5
3.5
4
4
V
V
V
V
DS
GS
5
5
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: g
fs
DS(on)
= f(I
m
1500
1200
1100
1000
900
800
700
600
500
400
300
200
100
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
S
D
0
1
0
= f (I
0
); T
0
j
=25°C
D
fs
GS
)
0.2
0.4
0.4
0.8
0.6
1.2
0.8
BSS670S2L
1.6
2012-03-29
A
A
3.5V
4V
4.5V
5V
6V
10V
I
I
D
D
1.2
2.2