BSS169H6327XT Infineon Technologies, BSS169H6327XT Datasheet - Page 3

• Manufacturer Part Number: BSS169H6327XT
• Description: MOSFET SIPMOS Small Signal Transistor
• Manufacturer: Infineon Technologies

Specifications of BSS169H6327XT

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 90 mA
• Resistance Drain-source Rds (on): 6 Ohms at 10 V
• Configuration: Single
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: PG-SOT-23
• Fall Time: 27 ns
• Gate Charge Qg: 2.1 nC
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 360 mW
• Rise Time: 2.7 ns
• Typical Turn-off Delay Time: 11 ns
• Part # Aliases: BSS169 BSS169H6327XTSA1 H6327

Rev. 1.8
Rev. 1.8
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
V
t
Q
d(on)
r
d(off)
f
S
S,pulse
rr
rss
plateau
SD
iss
oss
gs
gd
g
rr
V
f =1 MHz
V
V
I
V
V
T
V
T
V
di
D
A
j
GS
DD
GS
DD
GS
GS
R
=0.12 A, R
=25 °C
F
page 3
page 3
=25 °C
=50 V, I
/dt =100 A/µs
=-10 V, V
=50 V,
=-3…7 V,
=80 V, I
=-3 to 7 V
=-10 V, I
F
=0.12 A,
D
F
G
=0.12 A,
DS
=0.17 A,
=6 Ω
=25 V,
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
-0.43
0.12
0.79
20.5
typ.
2.9
2.7
0.9
2.1
9.7
51
11
27
9
4
-
-
max.
0.16
0.17
0.68
25.6
12.1
4.2
4.0
1.4
2.8
1.2
68
13
17
40
7
-
BSS169
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Unit
pF
ns
nC
V
A
V
ns
nC